FEATURES

◇ Glass passivated device

◇ Ideal for surface mouted applications

◇ Low leakage current

◇ Metallurgically bonded construction

MECHANICAL DATA

◇ Case:JEDEC DO-213AB,molded plastic over

passivated chip

◇ Terminals:Solder Plated, solderable per

MIL-STD-750, Method 2026

◇ Polarity: Color band denotes cathode end

◇ Weight: 0.0046 ounces, 0.116 gram

◇ Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

4001

4003

4004

4005

4006

4007

Maximum recurrent peak reverse voltage

50

200

400

600

800

1000

V

Maximum RMS voltage

35

140

280

420

560

700

V

Maximum DC blocking voltage

50

200

400

600

800

1000

V

Maximum average forword

rectified current

Peak forward surge current 8.3ms single

half-sine-wave superimposed

on rated load (JEDEC method)

Maximum forward voltage at 1.0A

V

Maximum DC reverse current

Typical junction capacitance (NOTE 1)

pF

Typical thermal resistance

(NOTE 2)

℃/W

Typical thermal resistance

(NOTE 3)

℃/W

Operating temperature range

℃

Storage temperature range

℃

2. Thermal resistance junction to lead, 6.0 mm

3. Thermal resistance junction to ambient, 6.0 mm

1.1

SM

SM

SM

- 55 --- + 175

A

MELF

70

100

μA

15

30

20

50

4002

UNITS

SM

SM

SM

SM

50

100

5.0

NOTES:1. Measured at 1.0MHz and applied average voltage of 4.0V DC.

A

- 55 --- + 175

1.0

SM4001 THRU SM4007

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.0 Ampere

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