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AM10P20-690D датащи(PDF) 1 Page - Analog Intergrations Corporation |
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AM10P20-690D датащи(HTML) 1 Page - Analog Intergrations Corporation |
1 / 5 page Analog Power AM10P20-690D P-Channel 200-V (D-S) MOSFET VDS (V) ID (A) -6.0 -5.9 Symbol Limit Units VDS -200 VGS ±20 Continuous Drain Current a TC=25°C ID -6.0 IDM -30 IS -10 A Power Dissipation a TC=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature A Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage PRODUCT SUMMARY -200 rDS(on) (mΩ) 900 @ VGS = -10V 950 @ VGS = -5.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM10P20-690D_1A |
Аналогичный номер детали - AM10P20-690D |
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Аналогичное описание - AM10P20-690D |
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