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BF1204 датащи(PDF) 4 Page - NXP Semiconductors |
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BF1204 датащи(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 2001 Apr 25 4 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 STATIC CHARACTERISTICS Tj =25 °C; per MOS-FET; unless otherwise specified. Note 1. RG1 connects gate 1 to VGG =5V. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; per MOS-FET (1); unless otherwise specified. Notes 1. For the MOS-FET not in use: VG1-S = 0; VDS =0. 2. Measured in Fig.19 test circuit. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S = 0; ID =10 µA10 − V V(BR)G1-SS gate-source breakdown voltage VGS =VDS = 0; IG1-S =10mA 6 10 V V(BR)G2-SS gate-source breakdown voltage VGS =VDS = 0; IG2-S =10mA 6 10 V V(F)S-G1 forward source-gate voltage VG2-S =VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate voltage VG1-S =VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate-source threshold voltage VDS =5V; VG2-S =4V; ID = 100 µA 0.3 1 V VG2-S(th) gate-source threshold voltage VDS =5V; VG1-S =4V; ID = 100 µA 0.3 1.2 V IDSX drain-source current VG2-S =4V; VDS =5V; RG = 120 kΩ; note 1 8 16 mA IG1-S gate cut-off current VG1-S =5V; VG2-S =VDS =0 − 50 nA IG2-S gate cut-off current VG2-S =4V; VG1-S =VDS =0 − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance Tj =25 °C 25 3040mS Cig1-ss input capacitance at gate 1 f = 1 MHz − 1.7 2.2 pF Cig2-ss input capacitance at gate 2 f = 1 MHz − 3.3 − pF Coss output capacitance f = 1 MHz − 0.85 − pF Crss reverse transfer capacitance f = 1 MHz − 15 − fF Gtr power gain f = 200 MHz; GS = 2 mS; BS =BS(opt); GL = 0.5 mS; BL =BL(opt); note 1 30 34 38 dB f = 400 MHz; GS = 2 mS; BS =BS(opt); GL = 1 mS; BL =BL(opt); note 1 26 30 34 dB f = 800 MHz; GS = 3.3 mS; BS =BS(opt); GL = 1 mS; BL =BL(opt); note 1 21 25 29 dB NF noise figure f = 10.7 MHz; GS = 20 mS; BS =0 − 911 dB f = 400 MHz; YS =YS(opt) − 0.9 1.5 dB f = 800 MHz; YS =YS(opt) − 1.1 1.8 dB Xmod cross-modulation input level for k = 1% at 0 dB AGC; fw = 50 MHz; funw = 60 MHz; note 2 90 −− dB µV input level for k = 1% at 10 dB AGC; fw = 50 MHz; funw = 60 MHz; note 2 − 92 − dB µV input level for k = 1% at 40 dB AGC; fw = 50 MHz; funw = 60 MHz; note 2 100 105 − dB µV |
Аналогичный номер детали - BF1204 |
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Аналогичное описание - BF1204 |
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