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AM90N20-140B датащи(PDF) 1 Page - Analog Power |
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AM90N20-140B датащи(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM90N20-140B N-Channel 200-V (D-S) MOSFET VDS (V) ID (A) 200 29 Symbol Limit Units VDS 200 VGS ±20 Continuous Drain Current TC=25°C ID 29 IDM 100 Continuous Source Current (Diode Conduction) TC=25°C IS 29 A Power Dissipation TC=25°C PD 300 W TJ, Tstg -55 to 150 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Pulse width limited by maximum junction temperature Pulsed Drain Current a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Gate-Source Voltage PRODUCT SUMMARY rDS(on) (mΩ) 240 @ VGS = 10V A Maximum Junction-to-Ambient a Maximum Junction-to-Case Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM90N20-140B_1A |
Аналогичный номер детали - AM90N20-140B |
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Аналогичное описание - AM90N20-140B |
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