поискавой системы для электроныых деталей |
|
FDS7779Z датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDS7779Z датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDS7779Z Rev C1 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C –22 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –16 A VGS = –4.5 V, ID = –15 A VGS= –10 V, ID =–16A, TJ=125°C 6 9 8 7.2 11.5 11 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A gFS Forward Transconductance VDS = –5 V, ID = –13 A 43 S Dynamic Characteristics Ciss Input Capacitance 3800 pF Coss Output Capacitance 980 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 490 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 20 36 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 100 160 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 55 88 ns Qg Total Gate Charge 70 98 nC Qgs Gate–Source Charge 10 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –16 A, VGS = –10 V 16 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.5 A (Note 2) –0.7 –1.2 V tRR Reverse Recovery Time 39 ns QRR Reverse Recovery Charge IF = –16 A, diF/dt = 100 A/µs (Note 2) 24 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 1in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. |
Аналогичный номер детали - FDS7779Z |
|
Аналогичное описание - FDS7779Z |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |