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IRLIZ34N датащи(PDF) 2 Page - International Rectifier

номер детали IRLIZ34N
подробное описание детали  Power MOSFET
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRLIZ34N датащи(HTML) 2 Page - International Rectifier

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IRLIZ34N
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.065 –––
V/°C
Reference to 25°C, ID = 1mA
†
–––
––– 0.035
VGS = 10V, ID = 12A
„
–––
––– 0.046
VGS = 5.0V, ID = 12A
„
–––
––– 0.060
VGS = 4.0V, ID = 10A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
11
–––
–––
S
VDS = 25V, ID = 16A
†
–––
–––
25
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
25
ID = 16A
Qgs
Gate-to-Source Charge
–––
–––
5.2
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
14
VGS = 5.0V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
8.9
–––
VDD = 28V
tr
Rise Time
–––
100
–––
ID = 16A
td(off)
Turn-Off Delay Time
–––
29
–––
RG = 6.5Ω, VGS = 5.0V
tf
Fall Time
–––
21
–––
RD = 1.8Ω, See Fig. 10
„†
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
880
–––
VGS = 0V
Coss
Output Capacitance
–––
220
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
94
–––
ƒ = 1.0MHz, See Fig. 5
†
C
Drain to Sink Capacitance
–––
12
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
S
D
G
IDSS
Drain-to-Source Leakage Current
IGSS
LS
Internal Source Inductance
–––
7.5
–––
LD
Internal Drain Inductance
–––
4.5
–––
µA
nA
ns
nH
RDS(on)
Static Drain-to-Source On-Resistance
Notes:
† Uses IRLZ34N data and test conditions
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… t=60s, ƒ=60Hz
ƒ ISD ≤ 16A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
†
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 12A, VGS = 0V
„
trr
Reverse Recovery Time
–––
76
110
ns
TJ = 25°C, IF = 16A
Qrr
Reverse RecoveryCharge
–––
190
290
nC
di/dt = 100A/µs
„†
Source-Drain Ratings and Characteristics
A
–––
–––
110
–––
–––
22
S
D
G


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