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TC55V040AFT-55 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TC55V040AFT-55
подробное описание детали  524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55V040AFT-55 датащи(HTML) 3 Page - Toshiba Semiconductor

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TC55V040AFT-55,-70
2003-08-06
3/11
DC RECOMMENDED OPERATING CONDITIONS (Ta
= −40° to 85°C)
2.3 V~3.6 V
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
2.3
3.0
3.6
V
VIH
Input High Voltage
2.2
VDD + 0.3
V
VIL
Input Low Voltage
0.3*
VDD × 0.22
V
VDH
Data Retention Supply Voltage
1.5
3.6
V
*:
3.0 V when measured at a pulse width of 50 ns
DC CHARACTERISTICS (Ta
= −40° to 85°C, VDD = 2.3 to 3.6 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
±1.0
µA
IOH
Output High Current
VOH = VDD 0.5 V
0.5
mA
IOL
Output Low Current
VOL = 0.4 V
2.1
mA
ILO
Output Leakage
Current
1
CE
= VIH or CE2 = VIL or R/W = VIL or OE = VIH,
VOUT = 0 V~VDD
±1.0
µA
55 ns
60
70 ns
50
lDDO1
1
CE
= VIL and CE2 = VIH and
R/W
= VIH and IOUT = 0 mA,
Other Input
= VIH/VIL
VDD =
3 V
± 10%
tcycle
1
µs
10
mA
55 ns
55
70 ns
45
lDDO2
Operating Current
1
CE
= 0.2 V and
CE2
= VDD 0.2 V and
R/W
= VDD 0.2 V, IOUT = 0 mA,
Other Input
= VDD 0.2 V/0.2 V
VDD =
3 V
± 10%
tcycle
1
µs
5
mA
IDDS1
CE
= VIH or CE2 = VIL
2
mA
Ta
= 25°C
0.6
VDD =
3 V
± 10%
Ta
= −40~85°C
6
Ta
= 25°C
0.7
VDD =
3.3 V
± 0.3 V Ta = −40~85°C
7
Ta
= 25°C
0.05
0.5
Ta
= −40~40°C
1
IDDS2
(Note)
Standby Current
1
CE
= VDD 0.2 V
or CE2
= 0.2 V
VDD = 1.5 V~3.6 V
VDD = 3.0 V
Ta
= −40~85°C
5
µA
Note:
In standby mode with
1
CE
VDD 0.2 V, these limits are assured for the condition CE2 VDD 0.2 V or CE2 0.2 V.
CAPACITANCE (Ta
= 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.


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