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STK5F1U3E3D-E датащи(PDF) 1 Page - ON Semiconductor |
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STK5F1U3E3D-E датащи(HTML) 1 Page - ON Semiconductor |
1 / 16 page 1 Publication Order Number : STK5F1U3E3D-E/D www.onsemi.com © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. STK5F1U3E3D-E Overview This “Inverter Power IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers Built-in cross conduction prevention Externally accessible embedded thermistor for substrate temperature measurement The level of the over-current protection current is adjustable with the external resistor, “RSD” Low switching noise by optimized the gate resistor Certification UL1557 (File Number: E339285) Specifications Absolute Maximum Ratings at Tc = 25 C Parameter Symbol Remarks Ratings Unit Supply voltage VCC P to N, surge < 500V *1 450 V Collector-emitter voltage VCE P to U,V,W or U,V,W to N 600 V Output current Io P, N, U, V, W terminal current ±50 A P, N, U, V, W terminal current, Tc=100 C ±25 Output peak current Iop P, N, U, V, W terminal current, PW=1ms ±76 A Pre-driver supply voltage VD1,2,3,4 VB1 to VS1,VB2 to VS2,VB3 to VS3,VDD to VSS *2 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 0.3 to VDD V FAULT terminal voltage VFAULT FAULT terminal 0.3 to VDD V Maximum loss Pd IGBT per channel 67.5 W Junction temperature Tj IGBT,FRD 150 C Storage temperature Tstg 40 to +125 C Operating temperature Tc IPM case 20 to +100 C Tightening torque MT A screw part at use M4 type screw *3 1.17 Nm Withstand voltage Vis 50Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is N terminal = VSS terminal voltage unless otherwise specified. *1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals. *2: Terminal voltage: VD1=VB1 VS1, VD2=VB2VS2, VD3=VB3VS3, VD4=VDDVSS. *3: Flatness of the heat-sink should be 0.25mm and below. *4: Test conditions: AC 2500V, 1 second. Inverter Power IPM for 3-phase Motor Drive Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. |
Аналогичный номер детали - STK5F1U3E3D-E |
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Аналогичное описание - STK5F1U3E3D-E |
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