1

Publication Order Number :

STK5F1U3E3D-E/D

www.onsemi.com

©

Semiconductor Components Industries, LLC, 2015

March 2015 - Rev. 1

ORDERING INFORMATION

See detailed ordering and shipping information on page 16 of this data sheet.

STK5F1U3E3D-E

Overview

This “Inverter Power IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to

3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and

implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag.

Internal Boost diodes are provided for high side gate boost drive.

Function

 Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit

 All control input and status output are at low voltage levels directly compatible with microcontrollers

 Built-in cross conduction prevention

 Externally accessible embedded thermistor for substrate temperature measurement

 The level of the over-current protection current is adjustable with the external resistor, “RSD”

 Low switching noise by optimized the gate resistor

Certification

 UL1557 (File Number: E339285)

Specifications

Absolute Maximum Ratings

at Tc = 25

C

Parameter

Symbol

Remarks

Ratings

Unit

Supply voltage

VCC

P to N, surge < 500V *1

450

V

Collector-emitter voltage

VCE

P to U,V,W or U,V,W to N

600

V

Output current

Io

P, N, U, V, W terminal current

±50

A

P, N, U, V, W terminal current, Tc=100

C

±25

Output peak current

Iop

P, N, U, V, W terminal current, PW=1ms

±76

A

Pre-driver supply voltage

VD1,2,3,4

VB1 to VS1,VB2 to VS2,VB3 to VS3,VDD to VSS *2

20

V

Input signal voltage

VIN

HIN1, 2, 3, LIN1, 2, 3

0.3 to VDD

V

FAULT terminal voltage

VFAULT

FAULT terminal

0.3 to VDD

V

Maximum loss

Pd

IGBT per channel

67.5

W

Junction temperature

Tj

IGBT,FRD

150

C

Storage temperature

Tstg

40 to +125

C

Operating temperature

Tc

IPM case

20 to +100

C

Tightening torque

MT

A screw part at use M4 type screw *3

1.17

Nm

Withstand voltage

Vis

50Hz sine wave AC 1 minute *4

2000

VRMS

Reference voltage is N terminal = VSS terminal voltage unless otherwise specified.

*1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.

*2: Terminal voltage: VD1=VB1

VS1, VD2=VB2VS2, VD3=VB3VS3, VD4=VDDVSS.

*3: Flatness of the heat-sink should be 0.25mm and below.

*4: Test conditions: AC 2500V, 1 second.

Inverter Power IPM

for 3-phase Motor Drive

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.