SI8401DB datasheet(2/5 Pages) VISHAY

номер детали	SI8401DB

подробное описание детали	P-Channel 20-V (D-S) MOSFET

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Si8401DB

Vishay Siliconix

www.vishay.com

2

Document Number: 71674

S-40384—Rev. F, 01-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.45

−0.9

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V, TJ = 70_C

−5

mA

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −4.5 V

−5

A

Drain Source On State Resistancea

rDS( )

VGS = −4.5 V, ID = −1 A

0.057

0.065

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −2.5 V, ID = −1 A

0.080

0.095

W

Forward Transconductancea

gfs

VDS = −10 V, ID = −1 A

6

S

Diode Forward Voltagea

VSD

IS = −1 A, VGS = 0 V

−0.73

−1.1

V

Dynamicb

Total Gate Charge

Qg

11

17

Gate-Source Charge

Qgs

VDS = −10 V, VGS = −4.5 V, ID = −1 A

2.1

nC

Gate-Drain Charge

Qgd

2.9

Turn-On Delay Time

td(on)

17

25

Rise Time

tr

VDD = −10 V, RL = 10 W

28

45

Turn-Off Delay Time

td(off)

VDD = −10 V, RL = 10 W

ID ^ −1 A, VGEN = −4.5 V, RG = 6 W

88

135

ns

Fall Time

tf

60

90

Source-Drain Reverse Recovery Time

trr

IF = − A, di/dt = 100 A/ms

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

0

2

4

6

8

10

0

2468

10

VGS = 5 thru 2.5 V

25_C

TC = 125_C

2 V

−55_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

Аналогичный номер детали - SI8401DB

производитель	номер детали	датащи	подробное описание детали
Silicon Laboratories	Si8401AA-B-IS	1Mb / 34P	BIDIRECTIONAL I2C ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS
Silicon Laboratories	Si8401AA-B-IS	581Kb / 34P	BIDIRECTIONAL I2C ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS
Skyworks Solutions Inc.	SI8401AA-B-IS	1Mb / 34P	BIDIRECTIONAL I2C ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS Revision 0.1 to Revision 1.0
Silicon Laboratories	Si8401AB-B-IS	1Mb / 34P	BIDIRECTIONAL I2C ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS
Silicon Laboratories	Si8401AB-B-IS	581Kb / 34P	BIDIRECTIONAL I2C ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS

More results

Аналогичное описание - SI8401DB

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

More results

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