2SD2118 datasheet(1/3 Pages) ISC

номер детали	2SD2118

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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isc Silicon NPN Power Transistor

2SD2118

DESCRIPTION

·

High current capacity

·

Small and slim package making it easy to make 2SD2118-used set smaller

·

Low collector-to-emitter saturation voltage

·

Fast switching speed

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Strobes,voltage regulators,relay drivers,lamp drivers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

PC

Collector Power Dissipation

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SD2118

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Rohm	2SD2118	159Kb / 4P	Low VCE(sat) Transistor(Strobe flash)
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Аналогичное описание - 2SD2118

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Аналогичный номер детали - 2SD2118

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