поискавой системы для электроныых деталей |
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2SC3989 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3989 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3989 DESCRIPTION · High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) · High Switching Speed · Wide Area of Safe Operation APPLICATIONS · Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SC3989 |
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Аналогичное описание - 2SC3989 |
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