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LM358MX датащи(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали LM358MX
подробное описание детали  Low Power Dual Operational Amplifiers
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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Electrical Characteristics (Continued)
V
+ = +5.0V, (Note 4), unless otherwise stated
Parameter
Conditions
LM358
LM2904
Units
Min
Typ
Max
Min
Typ
Max
Large Signal Voltage
V
+ = +15V
15
15
V/mV
Gain
(V
O = 1V to 11V)
R
L
≥ 2kΩ
Output
V
OH V
+ = +30V
R
L =2 k
26
22
V
Voltage
(LM2904, V
+ = 26V)
R
L =10 k
27
28
23
24
V
Swing
V
OL V
+ = 5V, R
L =10 k
5
20
5
100
mV
Output Current
Source V
IN
+ = +1V, V
IN
= 0V,
10
20
10
20
mA
V
+ = 15V, V
O =2V
Sink V
IN
= +1V, V
IN
+ = 0V,
58
58
mA
V
+ = 15V, V
O =2V
Note 1: For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a +125˚C maximum junction temperature and a thermal
resistance of 120˚C/W for MDIP, 182˚C/W for Metal Can, 189˚C/W for Small Outline package, and 230˚C/W for micro SMD, which applies for the device soldered
in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be derated based on a +150˚C maximum junction temperature.
The dissipation is the total of both amplifiers — use external resistors, where possible, to allow the amplifier to saturate or to reduce the power which is dissipated
in the integrated circuit.
Note 2: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short cirucits to ground, the maximum output
current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time duration
that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value
greater than −0.3V (at 25˚C).
Note 4: These specifications are limited to −55˚C
≤ TA ≤ +125˚C for the LM158/LM158A. With the LM258/LM258A, all temperature specifications are limited to
−25˚C
≤ TA ≤ +85˚C, the LM358/LM358A temperature specifications are limited to 0˚C ≤ TA ≤ +70˚C, and the LM2904 specifications are limited to −40˚C ≤ TA
+85˚C.
Note 5: VO . 1.4V, RS =0Ω with V
+ from 5V to 30V; and over the full input common-mode range (0V to V+ −1.5V) at 25˚C. For LM2904, V+ from 5V to 26V.
Note 6: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the outputso
no loading change exists on the input lines.
Note 7: The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25˚C). The upper end of the
common-mode voltage range is V+ −1.5V (at 25˚C), but either or both inputs can go to +32V without damage (+26V for LM2904), independent of the magnitude of
V+.
Note 8: Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This typically can be
detected as this type of capacitance increases at higher frequencies.
Note 9: Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
Note 10: Human body model, 1.5 k
Ω in series with 100 pF.
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5


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