SI9801DY datasheet(1/6 Pages) VISHAY

номер детали	SI9801DY

подробное описание детали	N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge

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Si9801DY

Vishay Siliconix

Document Number: 70712

S-61825—Rev. C, 16-Aug-99

www.vishay.com

S FaxBack 408-970-5600

5-1

N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

N-Channel

20

0.055 @ VGS = 4.5 V

"4.5

N-Channel

20

0.075 @ VGS = 3.0 V

"3.8

P-Channel

–20

0.080 @ VGS = –4.5 V

"4.0

P-Channel

–20

0.120 @ VGS = –3.0 V

"3.0

S2

G2

G1

S1

D

S1

D

G1

D

S2

D

G2

D

SO-8

5

6

7

8

Top View

2

3

4

1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

–20

V

Gate-Source Voltage

VGS

"14

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

"4.5

"4.0

A

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

"3.6

"3.0

A

Pulsed Drain Current

IDM

"20

A

Continuous Source Current (Diode Conduction)a

IS

1.7

–1.7

Maximum Power Dissipationa

TA = 25_C

PD

2.0

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P-Channel

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 10 sec.

Аналогичный номер детали - SI9801DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI9802DY	51Kb / 4P	Dual N-Channel Reduced Qg, Fast Switching MOSFET Rev. A, 19-Dec-96
Vishay Siliconix	SI9803DY	51Kb / 4P	P-Channel Reduced Qg Fast Switching MOSFET Rev. C, 11-Feb-98
VBsemi Electronics Co.,...	SI9803DY-T1-E3	959Kb / 8P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI9804DY	50Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. B, 01-Sep-97
VBsemi Electronics Co.,...	SI9804DY-T1-E3	1,007Kb / 9P	N-Channel 20V (D-S) MOSFET

More results

Аналогичное описание - SI9801DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI9803DY	51Kb / 4P	P-Channel Reduced Qg Fast Switching MOSFET Rev. C, 11-Feb-98
	SI4860DY	39Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFE Rev. C, 14-Apr-03
	SI7860DP-T1	147Kb / 7P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. E, 09-Feb-09
	SI4872DY	57Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. A, 17-Jul-00
	SI4850EY	61Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 29-Mar-04
	SI4392DY	55Kb / 5P	N-Channel Reduced Qg, Fast Switching WFET Rev. D, 26-Jul-04
	SI6802DQ	59Kb / 4P	N-Channel, Reduced Qg, Fast Switching MOSFET Rev. C, 18-Dec-96
DinTek Semiconductor Co...	DTB6035	235Kb / 6P	N-Channel Reduced Qg, Fast Switching MOSFET
Vishay Siliconix	SI4800BDY	252Kb / 9P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. H, 29-Dec-08
Vishay Siliconix	SI4398DY	104Kb / 6P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. C, 14-Feb-11

More results

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