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FDS7064SN3 датащи(PDF) 5 Page - Fairchild Semiconductor |
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FDS7064SN3 датащи(HTML) 5 Page - Fairchild Semiconductor |
5 / 7 page FDS7064SN3 Rev C1 (W) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7064SN3. Figure 12. FDS7064SN3 SyncFET body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 oC TA = 25 oC TA = 100 oC Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature 12.5 nS/div |
Аналогичный номер детали - FDS7064SN3 |
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Аналогичное описание - FDS7064SN3 |
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