SI4910DY datasheet(1/7 Pages) VISHAY

номер детали	SI4910DY

подробное описание детали	Dual N-Channel 40-V (D-S) MOSFET

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Vishay Siliconix

Si4910DY

Document Number: 73699

S09-0540-Rev. B, 06-Apr-09

www.vishay.com

1

Dual N-Channel 40-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

APPLICATIONS

• CCFL Inverter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

40

0.027 at VGS = 10 V

6.0

9.6

0.032 at VGS = 4.5 V

4.8

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free)

Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

G1

S1

N-Channel MOSFET

D2

G2

S2

N-Channel MOSFET

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 120 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

7.6

A

TC = 70 °C

6.0

TA = 25 °C

6.0b, c

TA = 70 °C

4.8b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

20

Source-Drain Current Diode Current

TC = 25 °C

IS

2.6

TA = 25 °C

1.6b, c

Pulsed Source-Drain Current

ISM

20

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5

Maximum Power Dissipation

TC = 25 °C

PD

3.1

W

TC = 70 °C

2

TA = 25 °C

2b, c

TA = 70 °C

1.28b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

49

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady-State

RthJF

30

40

Аналогичный номер детали - SI4910DY

производитель	номер детали	датащи	подробное описание детали
Vaishali Semiconductor	SI4910DY	251Kb / 3P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI4910DY	106Kb / 7P	Dual N-Channel 40-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI4910DY-T1-E3	1,004Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI4910DY	106Kb / 7P	Dual N-Channel 40-V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SI4910DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4906DY-T1-E3	267Kb / 10P	Dual N-Channel 40-V (D-S) MOSFET Rev. C, 16-Nov-09
Vishay Siliconix	SI7938DP	513Kb / 13P	Dual N-Channel 40-V (D-S) MOSFET Rev. A, 28-Sep-09
Analog Power	AM7640N	77Kb / 3P	Dual N-Channel 40-V (D-S) MOSFET
	AM4940N	120Kb / 5P	Dual N-Channel 40-V (D-S) MOSFET
	AM4942N	180Kb / 3P	Dual N-Channel 40-V (D-S) MOSFET
VBsemi Electronics Co.,...	9960M	1,004Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET
	AO4884	1Mb / 9P	Dual N-Channel 40-V (D-S) MOSFET
	VB3420	716Kb / 9P	Dual N-Channel 40 V (D-S) MOSFET
	VBA3410	614Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET
Leshan Radio Company	LDN4818T1G	327Kb / 3P	Dual N-Channel 40-V (D-S) MOSFET
VBsemi Electronics Co.,...	NTMD5836NLR2G	1,004Kb / 9P	Dual N-Channel 40-V (D-S) MOSFET

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