SI9803DY datasheet(1/4 Pages) VISHAY

номер детали	SI9803DY

подробное описание детали	P-Channel Reduced Qg Fast Switching MOSFET

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Si9803DY

Vishay Siliconix

Document Number: 70638

S-49559—Rev. C, 11-Feb-98

www.vishay.com

S FaxBack 408-970-5600

1

P-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

–25

0.040 @ VGS = –4.5 V

"5.9

–25

0.060 @ VGS = –3.0 V

"4.8

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

SS S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

–25

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

"5.9

A

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

"4.7

A

Pulsed Drain Current

IDM

"40

A

Continuous Source Current (Diode Conduction)a

IS

–2.1

Maximum Power Dissipationa

TA = 25_C

PD

2.5

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

50

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 10 sec.

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производитель	номер детали	датащи	подробное описание детали
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