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LM2665 датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали LM2665
подробное описание детали  Switched Capacitor Voltage Converter
Download  8 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2665 датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V+ to GND, or GND to OUT)
5.8V
SD
(GND − 0.3V) to (V+ +
0.3V)
V+ and OUT Continuous Output Current
50 mA
Output Short-Circuit Duration to GND (Note 2)
1 sec.
Continuous Power
Dissipation (T
A = 25˚C)(Note 3)
600 mW
T
JMax(Note 3)
150˚C
θ
JA (Note 3)
210˚C/W
Operating Junction
Temperature Range
−40˚ to 85˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temp. (Soldering, 10 seconds)
300˚C
ESD Rating
2kV
Electrical Characteristics
Limits in standard typeface are for T
J = 25˚C, and limits in boldface type apply over the full operating temperature range. Un-
less otherwise specified: V+ = 5V, C
1 = C2 = 3.3 µF. (Note 4)
Symbol
Parameter
Condition
Min
Typ
Max
Units
V+
Supply Voltage
2.5
5.5
V
I
Q
Supply Current
No Load
650
1250
µA
I
SD
Shutdown Supply Current
1
µA
V
SD
Shutdown Pin Input Voltage
Shutdown Mode
2.0
(Note 5)
V
Normal Operation
0.8
(Note 6)
I
L
Output Current
40
mA
R
SW
Sum of the R
ds(on)of the four
internal MOSFET switches
I
L = 40 mA
3.5
8
R
OUT
Output Resistance (Note 7)
I
L = 40 mA
12
25
f
OSC
Oscillator Frequency
(Note 8)
80
160
kHz
f
SW
Switching Frequency
(Note 8)
40
80
kHz
P
EFF
Power Efficiency
R
L (1.0k) between GND and
OUT
86
93
%
I
L = 40 mA to GND
90
V
OEFF
Voltage Conversion Efficiency
No Load
99
99.96
%
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device
beyond its rated operating conditions.
Note 2: OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be avoided. Also, for tem-
peratures above 85˚C, OUT must not be shorted to GND or V+, or device may be damaged.
Note 3: The maximum allowable power dissipation is calculated by using PDMax = (TJMax −TA)/θJA, where TJMax is the maximum junction temperature, TA is the
ambient temperature, and
θJA is the junction-to-ambient thermal resistance of the specified package.
Note 4: In the test circuit, capacitors C1 and C2 are 3.3 µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output
voltage and efficiency.
Note 5: The minimum input high for the shutdown pin equals 40% of V+.
Note 6: The maximum input low of the shutdown pin equals 20% of V+.
Note 7: Specified output resistance includes internal switch resistance and capacitor ESR. See the details in the application information for positive voltage doubler.
Note 8: The output switches operate at one half of the oscillator frequency, fOSC = 2fSW.
www.national.com
2


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