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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDS2582 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS2582 датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  ©2002 Fairchild Semiconductor Corporation FDS2582 Rev. B Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Resistive Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 56mH, IAS = 3A. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referance is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 3: RθJA is measured with 1.0 in 2 copper on FR-4 board Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V IDSS Zero Gate Voltage Drain Current VDS = 120V - - 1 µA VGS = 0V TC = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 4.1A, VGS = 10V - 0.057 0.066 Ω ID = 2A, VGS = 6V - 0.065 0.098 ID = 4.1A, VGS = 10V, TC = 150 oC - 0.125 0.146 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz -1290 - pF COSS Output Capacitance - 150 - pF CRSS Reverse Transfer Capacitance - 32 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 75V ID = 4.1A Ig = 1.0mA -19 25 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 2.3 3.0 nC Qgs Gate to Source Gate Charge - 5.4 - nC Qgs2 Gate Charge Threshold to Plateau - 3.1 - nC Qgd Gate to Drain “Miller” Charge - 4.4 - nC tON Turn-On Time VDD = 75V, ID = 4.1A VGS = 10V, RGS = 16Ω -- 45 ns td(ON) Turn-On Delay Time - 11 - ns tr Rise Time - 19 - ns td(OFF) Turn-Off Delay Time - 36 - ns tf Fall Time - 26 - ns tOFF Turn-Off Time - - 92 ns VSD Source to Drain Diode Voltage ISD = 4.1A - - 1.25 V ISD = 2A - - 1.0 V trr Reverse Recovery Time ISD= 4.1A, dISD/dt= 100A/µs- - 63 ns QRR Reverse Recovered Charge ISD= 4.1A, dISD/dt= 100A/µs - - 116 nC |
Аналогичный номер детали - FDS2582 |
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Аналогичное описание - FDS2582 |
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