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2SD1370 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1370 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1370 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A · High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High power switching applications · Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SD1370 |
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Аналогичное описание - 2SD1370 |
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