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IRLR7811W датащи(PDF) 1 Page - International Rectifier |
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IRLR7811W датащи(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 06/10/02 IRLR7811W SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 10.5m Ω 19nC Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A IDM Pulsed Drain Current 260 PD @TC = 25°C Power Dissipation 71 PD @TA = 100°C Power Dissipation* 1.5 W Linear Derating Factor 0.48 W/°C VGS Gate-to-Source Voltage ± 12 V TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 9 D-Pak PD - 94492 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.1 RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance Applications Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use |
Аналогичный номер детали - IRLR7811W |
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Аналогичное описание - IRLR7811W |
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