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BCW70 датащи(PDF) 6 Page - Yea Shin Technology Co., Ltd

номер детали BCW70
подробное описание детали  General Purpose Transistors
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производитель  YEASHIN [Yea Shin Technology Co., Ltd]
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6
REV.02 20120403
BCW70
T
J , JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
V
CC
= 30 V
104
103
102
101
100
10–1
10–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
I
CBO
AND
I
CEX @ V BE(off) = 3.0 V
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 16. Using the model and the device
thermal response the normalized effective transient thermal resis-
tance of Figure 14 was calculated for various duty cycles.
To find Z
θJA(t) , multiply the value obtained from Figure 14 by the
steady state value R θ
JA .
Example:
Dissipating 2.0 watts peak under the following conditions:
t
1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P
(pk) x R
θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
DEVICE CHARACTERISTICS


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