Radiation Hardened NPN Silicon Switching Transistors

Rev. V1

2N2221A, L, UA, UB &

2N2222A, L, UA, UB

1

1

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1

Features

 Qualified to MIL-PRF-19500/255

 Levels

JANSM-3K Rads (Si)

JAN

JANSD-10K Rads (Si) JANTX

JANSP-30K Rads (Si) JANTXV

JANSL-50K Rads (Si)

JAN

JANSR-100K Rads (Si)

 TO-18 (TO-206AA), Surface mount UA & UB

Packages

Applications

 Switching and Linear Applications

 DC and VHF Amplifier Applications

(Continued next page)

Parameter

Test Conditions

Symbol Units Minimum Maximum

Off Characteristics:

Collector - Emitter Breakdown

Vdc

50

—

Collector - Base Cutoff Current

µAdc

nAdc

—

10

10

Emitter - Base Cutoff Current

µAdc

nAdc

—

10

10

Collector - Emitter Cutoff Current

nAdc

—

50

Forward Current Transfer Ratio

2N2221A, L, UA, UB

2N2222A, L, UA, UB

hFE

30

35

40

40

20

50

75

100

100

30

—

150

—

120

—

—

325

11

120

—

Collector - Base Cutoff Current

Vdc

—

0.3

1.0

Base - Emitter Saturation Voltage

Vdc

0.6

—

1.2

2.0

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.