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TPC8001 датащи(PDF) 1 Page - Toshiba Semiconductor |
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TPC8001 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8001 2002-02-06 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 7 Drain current Pulse (Note 1) IDP 28 A Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 64 mJ Avalanche current IAR 7 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration |
Аналогичный номер детали - TPC8001 |
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Аналогичное описание - TPC8001 |
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