поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

BC846BPDW1T1G датащи(PDF) 2 Page - ON Semiconductor

номер детали BC846BPDW1T1G
подробное описание детали  Dual General Purpose Transistors
Download  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC846BPDW1T1G датащи(HTML) 2 Page - ON Semiconductor

  BC846BPDW1T1G Datasheet HTML 1Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 2Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 3Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 4Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 5Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 6Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 7Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 8Page - ON Semiconductor BC846BPDW1T1G Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 17 page
background image
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25
°C
PD
380
250
3.0
mW
mW/
°C
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
328
°C/W
Junction and Storage Temperature
TJ, Tstg
− 55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
65
45
30
V
Collector − Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
V(BR)CES
80
50
30
V
Collector − Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
80
50
30
V
Emitter − Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
6.0
6.0
6.0
V
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
hFE
200
420
150
270
290
520
475
800
Collector − Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA) All devices except SBC847BPDW1T1G
SBC847BPDW1T1G only
(IC = 100 mA, IB = 5.0 mA) All devices
(IC = 2 mA, IB = 0.5 mA) SBC847BPDW1T1G only
VCE(sat)
0.024
0.25
0.1
0.6
V
Base − Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base − Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
770
mV
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB


Аналогичный номер детали - BC846BPDW1T1G

производительномер деталидатащиподробное описание детали
logo
ON Semiconductor
BC846BPDW1T1G ONSEMI-BC846BPDW1T1G Datasheet
172Kb / 17P
   Dual General Purpose Transistors
October, 2010 ??Rev. 6
BC846BPDW1T1G ONSEMI-BC846BPDW1T1G Datasheet
178Kb / 17P
   Dual General Purpose Transistors
October, 2013 ??Rev. 9
More results

Аналогичное описание - BC846BPDW1T1G

производительномер деталидатащиподробное описание детали
logo
Rohm
EMX26 ROHM-EMX26 Datasheet
82Kb / 4P
   General purpose transistors (dual transistors)
logo
Shenzhen Jin Yu Semicon...
UMF5 HTSEMI-UMF5 Datasheet
616Kb / 2P
   General purpose transistors (dual transistors)
UMG3N HTSEMI-UMG3N Datasheet
1Mb / 1P
   General purpose transistors (dual transistors)
logo
Rohm
EMX18 ROHM-EMX18_1 Datasheet
82Kb / 4P
   General purpose transistors (dual transistors)
logo
Shenzhen Jin Yu Semicon...
EMH2 HTSEMI-EMH2 Datasheet
318Kb / 1P
   General purpose transistors (dual transistors)
UMH10N HTSEMI-UMH10N Datasheet
297Kb / 1P
   General purpose transistors (dual transistors)
logo
Rohm
EMT18 ROHM-EMT18_10 Datasheet
716Kb / 4P
   General purpose transistors(dual transistors)
IMX1T110 ROHM-IMX1T110 Datasheet
93Kb / 4P
   General purpose transistors(dual transistors)
logo
Shenzhen Jin Yu Semicon...
UMB3N HTSEMI-UMB3N Datasheet
508Kb / 1P
   General purpose transistors (dual transistors)
logo
Rohm
EMT18 ROHM-EMT18 Datasheet
78Kb / 4P
   General purpose transistors (dual transistors)
logo
Shenzhen Jin Yu Semicon...
EMD12 HTSEMI-EMD12 Datasheet
709Kb / 2P
   General purpose transistors (dual transistors)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com