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IRF6612TR1 датащи(PDF) 1 Page - International Rectifier

номер детали IRF6612TR1
подробное описание детали  HEXFET Power MOSFET
Download  10 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF6612TR1 датащи(HTML) 1 Page - International Rectifier

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www.irf.com
1
02/02/04
IRF6612/IRF6612TR1
HEXFET® Power MOSFET
Notes
 through ˆ are on page 10
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
DirectFET
™ ISOMETRIC
MX
SQ
SX
ST
MQ
MX
MT
Description
The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switch-
ing losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck convert-
ers including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socke
t.
VDSS
RDS(on) max
Qg(typ.)
30V
3.3m
Ω@V
GS = 10V
30nC
4.4m
Ω@V
GS = 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
g
PD @TA = 70°C
Power Dissipation
g
W
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
fj
–––
45
RθJA
Junction-to-Ambient
gj
12.5
–––
RθJA
Junction-to-Ambient
hj
20
–––
°C/W
RθJC
Junction-to-Case
ij
–––
1.4
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Max.
24
19
190
±20
30
136
-40 to + 150
2.8
0.022
1.8
89
PD - 95842


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