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IRF6612TR1 датащи(PDF) 1 Page - International Rectifier |
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IRF6612TR1 датащи(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 02/02/04 IRF6612/IRF6612TR1 HEXFET® Power MOSFET Notes through are on page 10 l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Applicable DirectFET Package/Layout Pad (see p.8,9 for details) DirectFET ISOMETRIC MX SQ SX ST MQ MX MT Description The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switch- ing losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck convert- ers including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socke t. VDSS RDS(on) max Qg(typ.) 30V 3.3m Ω@V GS = 10V 30nC 4.4m Ω@V GS = 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @TA = 70°C Power Dissipation g W PD @TC = 25°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 45 RθJA Junction-to-Ambient gj 12.5 ––– RθJA Junction-to-Ambient hj 20 ––– °C/W RθJC Junction-to-Case ij ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Max. 24 19 190 ±20 30 136 -40 to + 150 2.8 0.022 1.8 89 PD - 95842 |
Аналогичный номер детали - IRF6612TR1 |
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Аналогичное описание - IRF6612TR1 |
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