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TS87C51RD2 датащи(PDF) 11 Page - ATMEL Corporation |
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TS87C51RD2 датащи(HTML) 11 Page - ATMEL Corporation |
11 / 17 page Qualpack TS87C51RD2/TS83C51RD2 June 2001 11 Atmel Wireless & Microcontrollers Poly non overlaping the Field oxide on Tox/P- and Tox/N-: The DO is found to be 0.9def/cm². This result is in agreement with the goal for DO of 1 def/cm². 0 0,020,040,06 -0,05 -0,04 -0,03 -0,02 -0,01 0 Area in cm² INC P- INC N- Poisson Qbd < 0.1Cb/cm² CAPA WITH POLY NON OVERLAPING THE FIELD OXIDE DO=0.9 def/cm² Intrinsic defects: The graph here after represents the percentage of failure for a Qbd > 10 Cb/cm² vs the area. The worst case given by the bigest capacitors shows that 67% of the total distribution has a Qbd > 10 Cb/cm². This result guarantees a good reliability behaviour. The critical charge, supported by thin oxide and related to the extrinsic defects, is measured on TOX/P- capacitors of 42570µm² and TOX/N- capacitors of 85140µm². Following are the average results obtained on recent lots from a distribution of about 60 sites per wafer. The minimum specification limit is 10C/cm². 0 0,02 0,04 0,06 0,5 0,6 0,7 0,8 0,9 1 Area in cm² DEC P- DEC N- INC P- INC N- Qbd > 10 Cb/cm² SCMOS3 PROCESS |
Аналогичный номер детали - TS87C51RD2 |
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Аналогичное описание - TS87C51RD2 |
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