Qualpack TS87C51RD2/TS83C51RD2

June 2001

11

Atmel Wireless & Microcontrollers

Poly non overlaping the Field oxide on Tox/P- and Tox/N-:

The DO is found to be 0.9def/cm². This result is in agreement with the goal for DO of 1 def/cm².

0

0,020,040,06

-0,05

-0,04

-0,03

-0,02

-0,01

0

Area in cm²

INC P-

INC N-

Poisson

Qbd < 0.1Cb/cm²

CAPA WITH POLY NON OVERLAPING THE FIELD OXIDE

DO=0.9 def/cm²

Intrinsic defects:

The graph here after represents the percentage of failure for a Qbd > 10 Cb/cm² vs the area. The worst

case

given by the bigest capacitors shows that 67% of the total distribution has a Qbd > 10 Cb/cm². This result

guarantees a good reliability behaviour. The critical charge, supported by thin oxide and related to

the extrinsic

defects, is measured on TOX/P- capacitors of 42570µm² and TOX/N- capacitors of 85140µm². Following are the

average results obtained on recent lots from a distribution of about 60 sites per wafer. The minimum specification

limit is 10C/cm².

0

0,02

0,04

0,06

0,5

0,6

0,7

0,8

0,9

1

Area in cm²

DEC P-

DEC N-

INC P-

INC N-

Qbd > 10 Cb/cm²

SCMOS3 PROCESS