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FDS6990S датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6990S датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS6990S Rev B (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 °C 23 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 2.2 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 °C –6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.5 A VGS = 10 V, ID = 7.5 A, TJ =125 °C VGS = 4.5 V, ID = 6.5 A 17.5 27 24 22 35 30 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 15 V, ID = 10 A 22 S Dynamic Characteristics Ciss Input Capacitance 1233 pF Coss Output Capacitance 344 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 106 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 20 ns Qg Total Gate Charge 11 16 nC Qgs Gate–Source Charge 5 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 10 A, VGS = 5 V 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.9 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.9 A (Note 2) 0.5 0.7 V trr Diode Reverse Recovery Time 17 nS Qrr Diode Reverse Recovery Charge IF = 10A diF/dt = 300 A/µs (Note 3) 12.5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in 2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. |
Аналогичный номер детали - FDS6990S |
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Аналогичное описание - FDS6990S |
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