WFF18N50_14 datasheet(4/8 Pages) WINSEMI

номер детали	WFF18N50

подробное описание детали	Silicon N-Channel MOSFET

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WFF18N50 Product Description

Silicon

Silicon N-Channel

N-Channel

N-Channel MOSFET

MOSFET

Fig.11 Transient Thermal Response Curve

Fig.7 Breakdown Voltage Variation

vs. Temperature

Fig.8 On-Resistance Variation

vs.Temperature

Fig.9 Maximum Safe Operation Area

Fig.10 Maximum Drain Current vs

Case Temperature

*Notes:

1.V =0V

2.I =250µA

G S

D

- 5 0

0

5 0

1 0 0

1 5 0

2 0 0

0 . 8

0 . 9

1 . 0

1 . 1

1 . 2

T [°C]

J

- 1 0 0

- 7 5

- 5 0

- 2 5

0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

0 . 0

0 . 5

1 . 0

1 . 5

2 . 0

2 . 5

3 . 0

T [°C]

J

*No te s:

1 .V

=1 0 V

2 .I =9 .0 A

G S

D

V

Drain-Source Voltage[V]

D S

Operation in This Area

is lim ited by R DS(on)

*Note:

1.T =25 C

2.T =150 C

3.Single Pulse

C

J

。

1 0

0

1 0

1

1 0

2

1 0

3

1 0

- 1

1 0

0

1 0

1

1 02

1 0 0 u s

1 m s

1 0 m s

100ms

D C

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

0

5

1 0

1 5

2 0

Tc Case Temperature[°C]

t ,Square Wave Pulse Duration [sec]

1

1 .Z

(t)=3 .2 °C/W Ma x.

2 .Du ty Fa cto r,D=t1 /t2

3 .T

-T =P

*

θ J C

JM

C

DM

Z

(t)

θJ C

* N o te：

Single pulse

1 0

- 5

1 0

- 4

1 0

- 3

1 0

- 2

1 0

- 1

1 0

0

1 0

1

1 0

- 2

1 0

- 1

1 0

0

0 . 5

0 . 2

0 . 1

0 . 0 5

0 . 0 2

0 . 0 1

PD M

t1

t2

Аналогичный номер детали - WFF18N50_14

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Shenzhen Winsemi Microe...	WFF18N50L	184Kb / 8P	Silicon N-Channel MOSFET

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Аналогичный номер детали - WFF18N50_14

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