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TIP141G датащи(PDF) 3 Page - ON Semiconductor

номер детали TIP141G
подробное описание детали  Darlington Complementary Silicon Power Transistors
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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TIP141G датащи(HTML) 3 Page - ON Semiconductor

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP140, TIP145
(VCE = 40 Vdc, IB = 0)
TIP141, TIP146
(VCE = 50 Vdc, IB = 0)
TIP142, TIP147
ICEO
2.0
2.0
2.0
mA
Collector Cutoff Current
(VCB = 60 V, IE = 0)
TIP140, TIP145
(VCB = 80 V, IE = 0)
TIP141, TIP146
(VCB = 100 V, IE = 0)
TIP142, TIP147
ICBO
1.0
1.0
1.0
mA
Emitter Cutoff Current (VBE = 5.0 V)
IEBO
2 0
mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
hFE
1000
500
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
VCE(sat)
2.0
3.0
Vdc
Base−Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
VBE(sat)
3.5
Vdc
Base−Emitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
VBE(on)
3.0
Vdc
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA, Duty Cycle v 2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)
td
0.15
ms
Rise Time
tr
0.55
ms
Storage Time
ts
2.5
ms
Fall Time
tf
2.5
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
0.5
0.1
0.5
1.0
3.0
5.0
10
20
0.2
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+12 V
V1
appox.
-8.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
ms
0
RB
51
D1
+4.0 V
VCC
-30 V
RC
TUT
≈ 8.0 k
≈ 40
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
For NPN test circuit reverse diode and voltage polarities.
1.0


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