SI9958DY datasheet(2/6 Pages) VISHAY

номер детали	SI9958DY

подробное описание детали	Complementary 20-V (D-S) MOSFET

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Si9958DY

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2

Document Number: 70141

S-01025—Rev. J, 22-May-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

N-Ch

1.0

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

P-Ch

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

ZG

V l

D i C

I

VDS = 16 V, VGS = 0 V

N-Ch

1

A

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V

P-Ch

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 10 V, VGS = 0 V, TJ = 70_C

N-Ch

5

mA

VDS = –10 V, VGS = 0 V, TJ = 70_C

P-Ch

–5

OS

Di C

b

I

VDS w 5 V, VGS = 10 V

N-Ch

14

A

On-State Drain Currentb

ID(on)

VDS v –5 V, VGS = –10 V

P-Ch

–14

A

On-State Drain Currentb

ID(on)

VDS w 5 V, VGS = 4.5 V

N-Ch

3.5

A

VDS v –5 V, VGS = –4.5 V

P-Ch

–2.5

DiS

OS

R

i

b

VGS = 10 V, ID = 3.5 A

N-Ch

0.10

W

DiS

OS

R

i

b

VGS = –10 V, ID = 3.5 A

P-Ch

0.10

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 6 V, ID = 3 A

N-Ch

0.12

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = – 6 V, ID = 3 A

P-Ch

0.12

W

VGS = 4.5 V, ID = 2 A

N-Ch

0.15

VGS = –4.5 V, ID = 2 A

P-Ch

0.19

Forward Transconductanceb

gfs

VDS = 15 V, ID = 3.5 A

N-Ch

5.6

S

Forward Transconductanceb

gfs

VDS = –15 V, ID = –3.5 A

P-Ch

4.0

S

Diode Forward Voltageb

VSD

IS = 1.7 A, VGS = 0 V

N-Ch

0.9

1.2

V

Diode Forward Voltageb

VSD

IS = –1.7 A, VGS = 0 V

P-Ch

–0.9

–1.2

V

Dynamica

Total Gate Charge

Qg

NCh

l

N-Ch

9

30

C

Total Gate Charge

Qg

N-Channel

P-Ch

13

30

C

Gate-Source Charge

Qgs

N Channel

VDS = 10 V, VGS = 10 V, ID = 3.5 A

N-Ch

1.0

nC

Gate-Source Charge

Qgs

P-Channel

V10 V V

10 V I

3 5 A

P-Ch

2.0

nC

Gate-Drain Charge

Qgd

VDS = –10 V, VGS = –10 V, ID = –3.5 A

N-Ch

3.1

Gate-Drain Charge

Qgd

P-Ch

5.4

Turn-On Delay Time

td(on)

NCh

l

N-Ch

5

10

Turn-On Delay Time

td(on)

N Channel

P-Ch

21

40

Rise Time

tr

N-Channel

VDD = 10 V, RL = 10 W

N-Ch

12

25

Rise Time

tr

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

P-Ch

12

25

Turn-Off Delay Time

td(off)

P-Channel

V10 V R

10

W

N-Ch

17

30

ns

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 10 W

ID ^ –1 A, VGEN = –10 V, RG = 6 W

P-Ch

12

30

ns

Fall Time

tf

ID ^ –1 A, VGEN = –10 V, RG = 6 W

N-Ch

9

20

Fall Time

tf

P-Ch

11

20

Source-Drain Reverse Recovery Time

trr

IF = 3.5 A, di/dt = 100 A/ms

N-Ch

60

100

Source-Drain Reverse Recovery Time

trr

IF = 3.5 A, di/dt = 100 A/ms

P-Ch

50

100

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

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