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SI7623DN датащи(PDF) 2 Page - Vishay Siliconix |
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SI7623DN датащи(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 62668 S12-1764-Rev. A, 23-Jul-12 Vishay Siliconix Si7623DN New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 14 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 3.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.0031 0.0038 VGS = - 4.5 V, ID = - 15 A 0.0042 0.0053 VGS = - 2.5 V, ID = - 10 A 0.0072 0.0090 Forward Transconductancea gfs VDS = - 10 V, ID = - 20 A 70 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 5460 pF Output Capacitance Coss 645 Reverse Transfer Capacitance Crss 642 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 10 A 117 180 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A 55.5 85 Gate-Source Charge Qgs 7.9 Gate-Drain Charge Qgd 12.7 Gate Resistance Rg f = 1 MHz 0.4 2.2 4 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 37 70 ns Rise Time tr 38 70 Turn-Off Delay Time td(off) 82 150 Fall Time tf 25 50 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 14 25 Rise Time tr 13 25 Turn-Off Delay Time td(off) 83 150 Fall Time tf 14 25 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 35 A Pulse Diode Forward Current ISM - 80 Body Diode Voltage VSD IS = - 4 A, VGS = 0 V - 0.72 - 1.1 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 25 50 ns Body Diode Reverse Recovery Charge Qrr 12 24 nC Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 14 |
Аналогичный номер детали - SI7623DN |
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Аналогичное описание - SI7623DN |
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