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BC846W датащи(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

номер детали BC846W
подробное описание детали  NPN Silicon Epitaxial Planar Transistor
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производитель  BILIN [Galaxy Semi-Conductor Holdings Limited]
домашняя страница  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

BC846W датащи(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
NPN Silicon Epitaxial Planar Transistor
BC846W/BC847W/BC848W
F045
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base Breakdown
Voltage
V(BR)CBO
IC=10μA,IE=0
BC846W
BC847W
BC848W
80
50
30
V
Collector-emitter Breakdown
Voltage
V(BR)CEO
IC=10mA,IB=0
BC846W
BC847W
BC848W
65
45
30
V
Emitter-Base Breakdown
Voltage
V(BR)EBO
IE=1μA,IC=0
BC846W
BC847W
BC848W
6
6
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
15
nA
Emitter cut-off Current
IEBO
VEB=5V,IC=0
100
nA
DC Current Gain
hFE
VCE=5V,IC=10μA
BC846AW,BC847AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
140
250
480
VCE=5V,IC=2mA
BC846AW,BC847AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
110
200
420
180
290
520
220
450
800
Collector-Emitter Saturation
Voltage
VCE(sat)
IC=10mA, IB= 0.5mA
IC=100mA, IB= 5mA note1
90
200
250
600
mV
Base-emitter Saturation
Voltage
VBE(sat)
IC=10mA, IB= 0.5mA
IC=100mA, IB= 5mA note1
700
900
mV
Base-emmitter Voltage
VBE
IC=2mA,VCE=5V
IC=10mA,VCE=5V
580
660
700
770
mV
Transition Frequency
fT
VCE=5V,IC=10mA,f=100MHz
250
MHz
Collector-Base Capacitance
Ccb
VCB=10V,IE=0,f=1MHz
2
3
pF
Emitter-Base Capacitance
Ceb
VEB=0.5V,IE=0,f=1MHz
10
15
pF


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