SI4829DY datasheet(2/10 Pages) VISHAY

номер детали	SI4829DY

подробное описание детали	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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Document Number: 68760

S09-2109-Rev. B, 12-Oct-09

Vishay Siliconix

Si4829DY

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

f. Maximum under Steady State conditions is 110 °C/W.

g. Maximum under Steady State conditions is 110 °C/W.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient (MOSFET)b, f

RthJA

55

62.5

°C/W

Maximum Junction-to-Foot (Drain) (MOSFET)

RthJF

30

40

Maximum Junction-to-Ambient (Schottky)b, g

RthJA

57

75

Maximum Junction-to-Foot (Drain) (Schottky)

RthJF

42

55

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = - 250 µA

- 19

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

3

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.6

- 1.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 10 V

- 7

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 2.5 A

0.175

0.215

Ω

VGS = - 2.5 V, ID = - 1.0 A

0.260

0.320

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 2.5 A

5S

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

210

pF

Output Capacitance

Coss

55

Reverse Transfer Capacitance

Crss

40

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 10 V, ID = - 2.5 A

5.2

8

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A

2.6

4

Gate-Source Charge

Qgs

0.53

Gate-Drain Charge

Qgd

0.9

Gate Resistance

Rg

f = 1 MHz

7

14

Ω

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 5 Ω

ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω

20

30

ns

Rise Time

tr

45

70

Turn-Off DelayTime

td(off)

15

25

Fall Time

tf

10

15

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 5 Ω

ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω

510

Rise Time

tr

12

20

Turn-Off DelayTime

td(off)

15

25

Fall Time

tf

10

15

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