поискавой системы для электроныых деталей |
|
SI7655ADN датащи(PDF) 1 Page - Vishay Siliconix |
|
SI7655ADN датащи(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si7655ADN Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile ( www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) - 20 0.0036 at VGS = - 10 V - 40e 72 nC 0.0048 at VGS = - 4.5 V - 40e 0.0090 at VGS = - 2.5 V - 40e Ordering Information: Si7655ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View 3.3 mm 3.3 mm G 1 2 3 4 8 7 6 5 S S S D D D D PowerPAK 1212-8S 0.75 mm S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 40e A TC = 70 °C - 40e TA = 25 °C - 31a, b TA = 70 °C - 25a, b Pulsed Drain Current (t = 300 µs) IDM - 100 Continuous Source-Drain Diode Current TC = 25 °C IS - 40e TA = 25 °C - 4a, b Avalanche Current L = 0.1 mH IAS - 20 Single-Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 57 W TC = 70 °C 36 TA = 25 °C 4.8a, b TA = 70 °C 3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 |
Аналогичный номер детали - SI7655ADN |
|
Аналогичное описание - SI7655ADN |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |