SI7655ADN datasheet(1/9 Pages) VISHAY

номер детали	SI7655ADN

подробное описание детали	P-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si7655ADN

Document Number: 62909

S13-2075-Rev. A, 30-Sep-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

Low Thermal Resistance PowerPAK®

Package with Small Size and Low 0.75 mm

Profile

•100 % Rg and UIS Tested

•

Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

•

Smart Phones, Tablet PCs, Mobile

Computing

- Battery Switch

- Load Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (

www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

Qg (Typ.)

- 20

0.0036 at VGS = - 10 V

- 40e

72 nC

0.0048 at VGS = - 4.5 V

- 40e

0.0090 at VGS = - 2.5 V

- 40e

Ordering Information:

Si7655ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)

Bottom View

3.3 mm

G

1

2

3

4

8

7

6

5

S

D

PowerPAK 1212-8S

0.75 mm

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 40e

A

TC = 70 °C

- 40e

TA = 25 °C

- 31a, b

TA = 70 °C

- 25a, b

Pulsed Drain Current (t = 300 µs)

IDM

- 100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 40e

TA = 25 °C

- 4a, b

Avalanche Current

L = 0.1 mH

IAS

- 20

Single-Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

57

W

TC = 70 °C

36

TA = 25 °C

4.8a, b

TA = 70 °C

3a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

Аналогичный номер детали - SI7655ADN

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7655ADN	203Kb / 9P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SI7655ADN

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
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	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
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