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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM29F032B-150EE датащи(PDF) 3 Page - Advanced Micro Devices |
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AM29F032B-150EE датащи(HTML) 3 Page - Advanced Micro Devices |
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3 / 39 page  2 Am29F032B GENERAL DESCRIPTION The Am29F032B is a 32 Mbit, 5.0 volt-only Flash memory organized as 4,194,304 bytes of 8 bits each. The 4 Mbytes of data are divided into 64 sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F032B is offered in 40 -pin TSOP and 44-pin SO pa ckages. The Am29F032B is manufactured using AMD’s 0.32 µm process technology. This device is designed to be pro- grammed in-system with the standard system 5.0 volt V CC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be pro- grammed in standard EPROM programmers. The standard device offers access times of 70, 90, 120, and 150 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus con- tention, the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com- mands are written to the command register using stan- dard microprocessor write timings. Register contents serve as input to an internal state machine that con- trols the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 volt Flash or EPROM devices. The device is programmed by executing the program command sequence. This invokes the Embedded Pro- gram algorithm—an internal algorithm that automati- cally times the program pulse widths and verifies proper cell margin. The device is erased by executing the erase command sequence. This invokes the Em- bedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. A sector is typically erased and verified within one second. The device is erased when shipped from the factory. The hardware sector group protection feature disables both program and erase operations in any combination of the eight sector groups of memory. A sector group consists of four adjacent sectors. The Erase Suspend feature enables the system to put erase on hold for any period of time to read data from, or program data to, a sector that is not being erased. True background erase can thus be achieved. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low V CC detector automati- cally inhibits write operations during power transitions. The host system can detect whether a program or erase cycle is complete by using the RY/BY# pin, the DQ7 (Data# Polling) or DQ6 (toggle) status bits. After a program or erase cycle has been completed, the de- vice automatically returns to the read mode. A hardware RESET# pin terminates any operation in progress. The internal state machine is reset to the read mode. The RESET# pin may be tied to the sys- tem reset circuitry. Therefore, if a system reset occurs during either an Embedded Program or Embedded Erase algorithm, the device is automatically reset to the read mode. This enables the system’s microprocessor to read the boot-up firmware from the Flash memory. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the h i g h e s t leve ls o f qu al it y, r e li ab il it y, a n d c o s t effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the programming mechanism of hot electron injection. |
Аналогичный номер детали - AM29F032B-150EE |
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Аналогичное описание - AM29F032B-150EE |
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