поискавой системы для электроныых деталей |
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STD4N90K5 датащи(PDF) 1 Page - STMicroelectronics |
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STD4N90K5 датащи(HTML) 1 Page - STMicroelectronics |
1 / 15 page November 2016 DocID029956 Rev 1 1/15 This is information on a product in full production. www.st.com STD4N90K5 N- channel 900 V, 1.90 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD4N90K5 900 V 2.10 Ω 3 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STD4N90K5 4N90K5 DPAK Tape and reel |
Аналогичный номер детали - STD4N90K5 |
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Аналогичное описание - STD4N90K5 |
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