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STP26NM60ND датащи(PDF) 8 Page - STMicroelectronics

номер детали STP26NM60ND
подробное описание детали  Low input capacitance and gate charge
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STP26NM60ND датащи(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
8/23
DocID025283 Rev 1
Figure 8. Output characteristics
Figure 9. Transfer characteristics
Figure 10. Static drain-source on-resistance
Figure 11. Gate charge vs gate-source voltage
Figure 12. Capacitance variations
Figure 13. Normalized gate threshold voltage vs
temperature
ID
50
30
10
0
0
5
VDS(V)
10
(A)
15
5V
6V
VGS=9, 10V
20
40
20
7V
8V
AM16017v1
ID
50
30
10
0
0
4
VGS(V)
8
(A)
2
6
10
20
40
VDS=18V
AM16018v1
RDS(on)
0.140
0.138
0.136
0
4
ID(A)
(
Ω)
2
6
0.142
VGS=10V
8
10
0.144
0.146
0.148
12 14 16
0.150
AM16019v1
VGS
6
4
2
0
0
20
Qg(nC)
(V)
60
8
30
40
10
VDD=480V
ID=21A
12
300
200
100
0
400
500
VDS
10
50
VDS
(V)
AM16020v1
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
10000
AM16021v1
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
ID = 250 µA
AM16034v1


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