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STF33N65M2 датащи(PDF) 1 Page - STMicroelectronics |
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STF33N65M2 датащи(HTML) 1 Page - STMicroelectronics |
1 / 23 page This is information on a product in full production. December 2014 DocID027286 Rev 1 1/23 STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 , TAB Order codes VDS RDS(on) max ID STB33N65M2 650 V 0.14 Ω 24 A STF33N65M2 STP33N65M2 STI33N65M2 Table 1. Device summary Order codes Marking Package Packaging STB33N65M2 33N65M2 D²PAK Tape and reel STF33N65M2 TO-220FP Tube STP33N65M2 TO-220 STI33N65M2 I²PAK www.st.com |
Аналогичный номер детали - STF33N65M2 |
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Аналогичное описание - STF33N65M2 |
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