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STD11N65M2 датащи(PDF) 5 Page - STMicroelectronics |
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STD11N65M2 датащи(HTML) 5 Page - STMicroelectronics |
5 / 21 page DocID026376 Rev 1 5/21 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics 21 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 325 V, I D = 3.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 16 and 21) -9.5 - ns t r Rise time - 7.5 - ns t d(off) Turn-off delay time - 26 - ns t f Fall time - 15 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 7 A I SDM (1) (2) 1. Pulse width limited by safe operating area 2. Test condition is referred to through-hole package Source-drain current (pulsed) - 28 A V SD (3) 3. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage V GS = 0, I SD = 7 A - 1.6 V t rr Reverse recovery time I SD = 7 A (2) , di/dt = 100 A/μs V DD = 60 V (see Figure 18) -318 ns Q rr Reverse recovery charge - 2.5 nC I RRM Reverse recovery current - 15.5 A t rr Reverse recovery time I SD = 7 A, di/dt = 100 A/μs V DD = 60 V, T j =150 °C (see Figure 18) -437 ns Q rr Reverse recovery charge - 3.2 nC I RRM Reverse recovery current - 15 A |
Аналогичный номер детали - STD11N65M2 |
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Аналогичное описание - STD11N65M2 |
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