STD16N50M2 datasheet(3/21 Pages) STMICROELECTRONICS

номер детали	STD16N50M2

подробное описание детали	Extremely low gate charge

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STD16N50M2, STF16N50M2, STP16N50M2

Electrical ratings

DocID026641 Rev 5

3/21

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

TO-220

TO-220FP

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

13

A

ID

Drain current (continuous) at TC = 100 °C

8

A

IDM(1)

Drain current (pulsed)

52

A

PTOT

Total dissipation at TC = 25 °C

110

25

W

dv/dt (2)

Peak diode recovery voltage slope

15

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s, TC = 25 °C)

2500

V

Tstg

Storage temperature range

-55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS

(3) VDS ≤ 400 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case

1.14

5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Rthj-pcb(1)

Thermal resistance junction-pcb

50

Notes:

(1)When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)

4

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

215

mJ

Аналогичный номер детали - STD16N50M2

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD16N60M2	453Kb / 16P	Extremely low gate charge
	STD16N60M6	339Kb / 15P	N-channel 600 V, 0.260 Ω typ., 12 A MDmesh M6 Power MOSFET in a DPAK package May 2020 Rev 3
	STD16N65M2	944Kb / 17P	Extremely low gate charge October 2014 Rev 1
	STD16N65M5	1Mb / 19P	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK
	STD16N65M5	1Mb / 19P	N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

More results

Аналогичное описание - STD16N50M2

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STWA48N60M2	776Kb / 12P	Extremely low gate charge December 2015 Rev 1
	STL7N60M2	310Kb / 13P	Extremely low gate charge January 2015 Rev 1
	STD7N60M2	1Mb / 21P	Extremely low gate charge June 2013 Rev 1
	STB28N60M2	1Mb / 21P	Extremely low gate charge
	STD11N65M2	1Mb / 21P	Extremely low gate charge May 2014 Rev 1
	STF5N60M2	743Kb / 13P	Extremely low gate charge June 2016 Rev 2
	STF7N65M2	904Kb / 13P	Extremely low gate charge August 2014 Rev 2
	STL13N65M2	642Kb / 16P	Extremely low gate charge December 2014 Rev 1
	STL19N60M2	770Kb / 15P	Extremely low gate charge January 2016 Rev 1
	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1
	STB24N65M2	1Mb / 20P	Extremely low gate charge

More results

STD16N50M2 датащи(PDF) 3 Page - STMicroelectronics

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Аналогичный номер детали - STD16N50M2

Аналогичное описание - STD16N50M2

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