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STD47N10F7AG датащи(PDF) 1 Page - STMicroelectronics |
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STD47N10F7AG датащи(HTML) 1 Page - STMicroelectronics |
1 / 16 page February 2017 DocID027183 Rev 3 1/16 This is information on a product in full production. www.st.com STD47N10F7AG Automotive-grade N- channel 100 V, 12.5 mΩ typ., 45 A, STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STD47N10F7AG 100 V 18 mΩ 45 A 60 W AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripF ET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STD47N10F7AG 47N10F7 DPAK Tape and reel AM01475v1_noZen D(2, TAB) G(1) S(3) |
Аналогичный номер детали - STD47N10F7AG |
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Аналогичное описание - STD47N10F7AG |
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