STF6N80K5 datasheet(3/15 Pages) STMICROELECTRONICS

номер детали	STF6N80K5

подробное описание детали	Ultra low gate charge

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STF6N80K5, STFI6N80K5

Electrical ratings

15

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

30

V

ID

Drain current (continuous) at TC = 25 °C

4.5(1)

1.

Limited by maximum junction temperature

A

ID

Drain current (continuous) at TC = 100 °C

2.8

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

18

A

PTOT

Total dissipation at TC = 25 °C

25

W

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax )

1.5

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

85

mJ

dv/dt (3)

3.

ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

4.

VDS ≤ 640 V

MOSFET dv/dt ruggedness

50

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s, TC = 25 °C)

2500

V

Tj

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

5

°C/W

Rthj-amb

Thermal resistance junction-amb

62.5

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Аналогичное описание - STF6N80K5

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STF6N80K5 датащи(PDF) 3 Page - STMicroelectronics

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Аналогичный номер детали - STF6N80K5

Аналогичное описание - STF6N80K5

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