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STF7N65M2 датащи(PDF) 6 Page - STMicroelectronics

номер детали STF7N65M2
подробное описание детали  Extremely low gate charge
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Electrical characteristics
STF7N65M2
6/13
DocID026763 Rev 2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
ID
10
1
0.1
0.1
1
VDS(V)
10
(A)
10μs
1ms
100μs
0.01
Tj=150°C
Tc=25°C
Single pulse
10ms
100
GIPG060820141147FSR
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID
6
2
0
0
5
VDS(V)
10
(A)
15
4V
5V
VGS=7, 8, 9, 10V
4
8
20
6V
GIPG060820141159FSR
ID
6
4
2
0
04
VGS(V)
8
(A)
26
8
VDS=20V
GIPG060820141210FSR
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
VGS
6
4
2
0
0
4
Qg(nC)
(V)
8
6
8
10
VDD=520V
ID=5A
300
200
100
0
400
500
VDS
2
10
VDS
(V)
12
600
GIPG060820141216FSR
RDS(on)
0.96
0.94
0.92
0
2
ID(A)
(Ω)
1
3
0.98
VGS=10V
4
5
1.0
1.02
1.04
GIPG060820141221FSR


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