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STP10N105K5 датащи(PDF) 1 Page - STMicroelectronics |
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STP10N105K5 датащи(HTML) 1 Page - STMicroelectronics |
1 / 18 page October 2014 DocID026932 Rev 2 1/18 This is information on a product in full production. www.st.com STF10N105K5, STP10N105K5, STW10N105K5 N- channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order codes VDS RDS(on) max. ID PTOT STF10N105K5 1050 V 1.3 Ω 6 A 30 W STP10N105K5 130 W STW10N105K5 130 W Industry’s lowest R DS(on) Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order codes Marking Package Packaging STF10N105K5 10N105K5 TO-220FP Tube STP10N105K5 10N105K5 TO-220 Tube STW10N105K5 10N105K5 TO-247 Tube 1 2 3 TAB TO-220 1 2 3 TO-220FP 1 2 3 TO-247 D(2, TAB) G(1) S(3) AM01476v1 |
Аналогичный номер детали - STP10N105K5 |
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Аналогичное описание - STP10N105K5 |
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