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STFI11N65M2 датащи(PDF) 1 Page - STMicroelectronics |
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STFI11N65M2 датащи(HTML) 1 Page - STMicroelectronics |
1 / 15 page September 2015 DocID025806 Rev 2 1/15 This is information on a product in full production. www.st.com STF11N65M2, STFI11N65M2 N- channel 650 V, 0.6 Ω typ., 7 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STF11N65M2 650 V 0.68 Ω 7 A 25 W STFI11N65M2 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF11N65M2 11N65M2 TO-220FP Tube STFI11N65M2 I²PAKFP TO-220FP I2PAKFP (TO-281) |
Аналогичный номер детали - STFI11N65M2 |
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Аналогичное описание - STFI11N65M2 |
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