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STFI13N80K5 датащи(PDF) 1 Page - STMicroelectronics |
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STFI13N80K5 датащи(HTML) 1 Page - STMicroelectronics |
1 / 13 page This is information on a product in full production. December 2014 DocID027200 Rev 2 1/13 13 STFI13N80K5 N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package Datasheet - production data Figure 1. Internal schematic diagram Features • Fully insulated and low profile package with increased creepage path from pin to heatsink plate • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on- resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 1 2 3 I2PAKFP D(2) G(1) S(3) AM01476v1 Order code VDS RDS(on) ID PTOT STFI13N80K5 800 V 0.45 Ω 12 A 35 W Table 1. Device summary Order code Marking Package Packaging STFI13N80K5 13N80K5 I²PAKFP (TO-281) Tube www.st.com |
Аналогичный номер детали - STFI13N80K5 |
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Аналогичное описание - STFI13N80K5 |
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