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STFU24N60M2 датащи(PDF) 5 Page - STMicroelectronics |
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STFU24N60M2 датащи(HTML) 5 Page - STMicroelectronics |
5 / 12 page STFU24N60M2 Electrical characteristics DocID027630 Rev 2 5/12 Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD(1) Source-drain current - 18 A ISDM(1)(2) Source-drain current (pulsed) - 72 A VSD(3) Forward on voltage ISD = 18 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs, VDD = 60 V ( see Figure 16: "Test circuit for inductive load switching and diode recovery times" ) - 332 ns Qrr Reverse recovery charge - 4 µC IRRM Reverse recovery current - 24 A trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C, (see Figure 16: "Test circuit for inductive load switching and diode recovery times" ) - 450 ns Qrr Reverse recovery charge - 5.5 µC IRRM Reverse recovery current - 25 A Notes: (1)The value is rated according to Rthj-case and limited by package. (2)Pulse width limited by safe operating area. (3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. |
Аналогичный номер детали - STFU24N60M2 |
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Аналогичное описание - STFU24N60M2 |
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