поискавой системы для электроныых деталей |
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SI3588DV датащи(PDF) 6 Page - Vishay Siliconix |
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SI3588DV датащи(HTML) 6 Page - Vishay Siliconix |
6 / 7 page Si3588DV Vishay Siliconix New Product www.vishay.com 6 Document Number: 71332 S-02383—Rev. A, 23-Oct-00 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) –0.2 –0.1 0.0 0.1 0.2 0.3 0.4 –50 –25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0 1234 5 VGS – Gate-to-Source Voltage (V) 0 1 2 3 4 5 0 1234 5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 Gate Charge Qg – Total Gate Charge (nC) On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.2 A TJ – Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage TJ – Temperature (_C) ID = 250 mA VDS = 10 V ID = 2.2 A ID = 2.2 A 0.01 0 1 6 8 2 4 10 30 0.1 Single Pulse Power (Junction-to-Ambient) Time (sec) |
Аналогичный номер детали - SI3588DV |
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Аналогичное описание - SI3588DV |
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