SI8902EDB datasheet(1/5 Pages) VISHAY

номер детали	SI8902EDB

подробное описание детали	Bi-Directional N-Channel 20-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

D Ultra-Low rSS(on)

D ESD Protected: 4000 V

D New MICRO FOOTt Chipscale Packaging Reduces

Footprint Area, Profile (0.65 mm) and On-Resistance

Per Footprint Area

APPLICATIONS

D Battery Protection Circuit

-

1-2 Cell Li+/LiP Battery Pack for Portable Devices

Si8902EDB

Vishay Siliconix

New Product

Document Number: 71862

S-21337—Rev. C, 05-Aug-02

www.vishay.com

1

Bi-Directional N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VS1S2 (V)

rS1S2(on) (W)

IS1S2 (A)

0.045 @ VGS = 4.5 V

5.0

0.048 @ VGS = 3.7 V

4.8

20

0.057 @ VGS = 2.5 V

4.4

0.072 @ VGS = 1.8 V

3.9

1

G2

S2

G1

S1

N-Channel

4 k

W

4 k

W

MICRO FOOT

t

Device Marking:

8902E = P/N Code

xxx = Date/Lot Traceability Code

S2

Bump Side View

G2

G1

4

3

5

6

S1

2

Backside View

Pin 1 Identifier

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Source1—Source2 Voltage

VS1S2

20

Gate-Source Voltage

VGS

"12

V

_ a

TA = 25_C

5.0

3.9

Continuous Source1—Source2 Current (TJ = 150_C)a

TA = 85_C

IS1S2

3.4

2.8

A

Pulsed Source1—Source2 Current

ISM

8

TA = 25_C

1.7

1

Maximum Power Dissipationa

TA = 85_C

PD

0.8

0.5

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

VPR

215

_C

Package Reflow Conditionsc

IR/Convection

220

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 5 sec

60

75

Maximum Junction-to-Ambienta

Steady State

RthJA

95

120

_C/W

Maximum Junction-to-Footb

Steady State

RthJF

18

22

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

The Foot is defined as the top surface of the package.

c.

Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.

Аналогичный номер детали - SI8902EDB

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI8902EDB	193Kb / 4P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. B, 23-Jan-06
	SI8902EDB	205Kb / 9P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. I, 22-Dec-08
	SI8902EDB	249Kb / 10P	Bi-Directional N-Channel 20 V (D-S) MOSFET 08-Feb-17
	SI8902EDB-T2-E1	205Kb / 9P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. I, 22-Dec-08
	SI8902EDB	193Kb / 4P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. B, 23-Jan-06

More results

Аналогичное описание - SI8902EDB

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI8902EDB	205Kb / 9P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. I, 22-Dec-08
	SI8902EDB	249Kb / 10P	Bi-Directional N-Channel 20 V (D-S) MOSFET 08-Feb-17
	SI8900EDB	56Kb / 5P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. D, 26-Aug-02
	SI8902EDB	193Kb / 4P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. B, 23-Jan-06
	SIF902EDZ	106Kb / 6P	Bi-Directional N-Channel 20-V (D-S) MOSFET Rev. B, 24-Mar-08
	SI8901EDB	190Kb / 4P	Bi-Directional P-Channel 20-V (D-S) MOSFET Rev. B, 23-Jan-06
	SI8901EDB	220Kb / 3P	Bi-Directional P-Channel 20-V (D-S) MOSFET 19-Apr-04
	SI8901EDB	101Kb / 6P	Bi-Directional P-Channel 20-V (D-S) MOSFET 01-Jan-2022
	SI8904EDB	103Kb / 6P	Bi-Directional N-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SIF912EDZ	65Kb / 5P	Bi-Directional N-Channel 30-V (D-S) MOSFET Rev. B, 24-Jan-05

More results

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Аналогичный номер детали - SI8902EDB

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