STGW30H60DLFB datasheet(4/20 Pages) STMICROELECTRONICS

номер детали	STGW30H60DLFB

подробное описание детали	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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Electrical characteristics

STGB30H60DLFB, STGW30H60DLFB

4/20

DocID026409 Rev 2

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 30 A

1.55

2

V

VGE = 15 V, IC = 30 A

TJ = 125 °C

1.65

VGE = 15 V, IC = 30 A

TJ = 175 °C

1.75

VF

Forward on-voltage

IF = 30 A

1.4

1.7

V

IF = 30 A TJ = 125 °C

1.2

IF = 30 A TJ = 175 °C

1.05

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-3659

-

pF

Coes

Output capacitance

-

101

-

pF

Cres

Reverse transfer

capacitance

-76

-

pF

Qg

Total gate charge

VCC = 520 V, IC = 30 A,

VGE = 15 V, see Figure 26

-149

-

nC

Qge

Gate-emitter charge

-

25

-

nC

Qgc

Gate-collector charge

-

62

-

nC

Аналогичный номер детали - STGW30H60DLFB

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGW30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3
STMicroelectronics	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed November 2016 Rev 3

More results

Аналогичное описание - STGW30H60DLFB

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed October 2015 Rev 2
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed November 2016 Rev 3
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed March 2014 Rev 4
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed October 2016 Rev 1
	STGW60H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed February 2014 Rev 3
	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed July 2015 Rev 5
	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3
	STGFW30V60F	1Mb / 19P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed April 2014 Rev 4
	STGFW30V60DF	1Mb / 15P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed March 2014 Rev 1
	STGWT40HP65FB	909Kb / 17P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

More results

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Аналогичный номер детали - STGW30H60DLFB

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